Course Syllabus for

Physics of Nanoscale MOSFETs
Fysiken för fälteffekttransistorer på nanoskala

EIT115F, 7.5 credits

Valid from: Autumn 2014
Decided by: FN1/Anders Gustafsson
Date of establishment: 2014-10-20

General Information

Division: Electrical and Information Technology
Course type: Third-cycle course
Teaching language: English


The course aims at giving a modern description of the physics of nanoscale field effect transistors. At these length scales, the electron transport is quasi-ballistic, and the transistor modeling is different as compared with the traditional diffusive models. After the course, the student should be able to read scientific articles from relevant journals.


Knowledge and Understanding

For a passing grade the doctoral student must

Competences and Skills

For a passing grade the doctoral student must

Judgement and Approach

For a passing grade the doctoral student must

Course Contents

Basic Transport Physics 1D and 2D MOS electrostatics Fundamental limits for CMOS switches Ballistic 2D FETs Diffusive MOSFETs Basics of scattering theory Ballistic 1D FETs & CNT FETs Molecular FETs and single electron transistors

Course Literature

Lundstrom, M. & Guo, J.: Nanoscale Transistors. Springer, 2005. ISBN 9780387280028.
Available as an e-book

Instruction Details

Types of instruction: Lectures, exercises

Examination Details

Examination format: Written exam
Grading scale: Failed, pass

Admission Details

Assumed prior knowledge: Basic knowledge of semiconductor physics and MOSFETs

Further Information

Course Coordinator: Erik Lind,

Course Occasion Information

Contact and Other Information

Course coordinator: Erik Lind <>
Web page:

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