English

Every spring semester

This course aims at providing fundamental knowledge of the physics which enables the very high frequency operation of modern transistors. Basic amplifier design for microwave frequencies is introduced.

The course gives a modern description of transistors relevant for quantum well and FinFET devices, mainly based on ballistic transport.

Basic semiconductor physics: density of states, band structure and Fermi-Dirac statistics for two-dimensional quantum structures.

Ballistic and diffusive transport in semiconductors.

Small signal modeling and the two-port description. Current and power gains. Stability.

(Heterostructure) FET: Geometric layout. Diffusive and ballistic DC and AC models with transcapacitances. Parasitic resistances and capacitances. Noise properties

Transmission lines and Smith charts. Basic design of low noise amplifiers.

describe the physics behind the operation of ballistic field effect transistors

explain the origin of the hybrid-pi model and transcapacitances.

describe the fundamental high frequency parameters for basic amplifiers

understand the Smith chart representation of transmission lines

relate the high frequency performance of a device from the device geometry and materials properties

be able to perform relevant RF and DC calculations on transistors

apply two-port description for transistor modeling

calculate the maximum frequency performance of a transistor

perform simple parameter extractions

perform basic design of a microwave amplifier

realize the need for device scaling for high performance transistors

Understand the origins of the maximum frequency performance limits for transistors

Lectures

Seminars

Laboratory exercises

Exercises

Written exam

Written assignments

Seminars given by participants

Failed, pass

None

Knowhow corresponding to ESS030/ESSF20 or FFF021/FFN30 or ETIN70

Liu, W.: Fundamentals of III-V Devices: HBTs, MESFETs and HFETs/HEMTs.. Wiley Interscience, 1999. ISBN 9780471297000.
Lundstrom, M. & Guo, J.: Nanoscale Transistors, Device Physics, Modeling and Simulation.. Springer, 2006. ISBN 9781441939159.
Föreläsningsanteckningar och utskrifter.

Course Coordinator: Mattias Borg, mattias.borg@eit.lth.se

EITP01F

 -12-07

Professor Thomas Johansson