Nanoelectronics
Nanoelektronik

EITP05F, 7.5 credits

Valid from: Spring 2018
Decided by: Professor Thomas Johansson
Date of establishment: 2018-12-21

General Information

Division: Electrical and Information Technology
Course type: Course given jointly for second and third cycle
The course is also given at second-cycle level with course code: EITP05
Teaching language: English

Aim

This course deals with the applications of nanoelectronics in a number of areas and it will give knowledge about how devices may be realized and modelled for applications both extending and beyond CMOS. For instance, the nanotechnology allows for an heterogeneous materials integration of transistors which may be used to reduce the power consumption in circuit applications and for programmable memories. The course will use knowledge in the areas of nanotechnology and circuit design (Modern electronics and High-speed Electonics). The use of nanowires and nanotubes will be discussed and different device technologies with potential to reduce the power consumption will be emphasized. Appliications within communication technology, radar, as well within the THz region will further be discussed. The course aims at providing a basis in how advanced materials science will generate new electronic applications.

Goals

Knowledge and Understanding

For a passing grade the doctoral student must

• be able to understand the limits of conventional technologies
• be able to describe the function for a set of nanodevices
• be able to describe where to use nanodevices
• be able to describe applications of nanoelectronics in communication technology radar

Competences and Skills

For a passing grade the doctoral student must

• be able to build a model for the device
• be able to design a simple circuit
• be able to examine the use of various nanodevices
• be able to develop nanodevices for communication technology and radar
• be able to write a scientific report in the form of a research article in IEEE format

Judgement and Approach

For a passing grade the doctoral student must

• understand where nanoelectronics may contribute to the future development
• have experience of working in a research project
• realize the need for compromise between technology and application

Course Contents

Possibilities and challenges for the Si CMOS technology at and beyond the 20 nm node; FinFETs and NWFETs. Heterogeneous materials integration, High-k dielectrics, and ferroelectric materials. Tunneling devices and steep-slope transistors. Electronics based on III-V nanowires for high frequency applications (like 5G and THz) and neuromorphic applications. During the laborations, the students will use models for nanoelectronic devices and during the project simulate how these perform in simple circuits. The use of conventional tools that the engineer later will use professionally will be emphazised.The design project will result in a writen student article in IEEE format.

Course Literature

Research Papers

Instruction Details

Types of instruction: Lectures, laboratory exercises, project

Examination Details

Examination formats: Written exam, written report
Grading scale: Failed, pass
Examiner:

Admission Details

Assumed prior knowledge: ETIN70 Modern Electronics or equivalent.

Further Information

Course Coordinator Lars-Erik Wernersson lars-erik.wernersson@eit.lth.se

Course Occasion Information

Contact and Other Information

Course coordinators:
Web page: https://www.eit.lth.se/index.php?ciuid=1241&L=0