Physics of Nanoscale MOSFETs
Fysiken för fälteffekttransistorer på nanoskala

EIT115F, 7.5 credits

Valid from: Autumn 2014
Decided by: FN1/Anders Gustafsson
Date of establishment: 2014-10-20

General Information

Division: Electrical and Information Technology
Course type: Third-cycle course
Teaching language: English

Aim

The course aims at giving a modern description of the physics of nanoscale field effect transistors. At these length scales, the electron transport is quasi-ballistic, and the transistor modeling is different as compared with the traditional diffusive models. After the course, the student should be able to read scientific articles from relevant journals.

Goals

Knowledge and Understanding

For a passing grade the doctoral student must

• be able to analyze the field effect transistors assuming ballistic transport
• be able to describe the effect from scattering for quasi-ballistic 2D MOSFETs
• be able to explain the effect due to 2D electrostatics for the FET performance and scaling
• be able to explain how the band structure affectes the ballistic currents for 1D and 2D MOSFETs
• be able to describe the function for a single electron transistor

Competences and Skills

For a passing grade the doctoral student must

• Independently be able to perform calculations of ballistic currents for 1D and 2D transistors
• be able to perform relevant approximations for strongly degenerated and non-degenerated biasings.
• be able to relate low field mobility to mean free path

Judgement and Approach

For a passing grade the doctoral student must

• be able to understand the critical differences between the diffusive and ballistic transistor models
• reflect over possibilities and fundamental limits for nanoscale MOSFETs

Course Contents

Basic Transport Physics 1D and 2D MOS electrostatics Fundamental limits for CMOS switches Ballistic 2D FETs Diffusive MOSFETs Basics of scattering theory Ballistic 1D FETs & CNT FETs Molecular FETs and single electron transistors

Course Literature

Lundstrom, M. & Guo, J.: Nanoscale Transistors. Springer, 2005. ISBN 9780387280028.
Available as an e-book

Instruction Details

Types of instruction: Lectures, exercises

Examination Details

Examination format: Written exam
Grading scale: Failed, pass
Examiner:

Admission Details

Assumed prior knowledge: Basic knowledge of semiconductor physics and MOSFETs

Further Information

Course Coordinator: Erik Lind, erik.lind@eit.lth.se

Course Occasion Information

Contact and Other Information

Course coordinator: Erik Lind <erik.lind@eit.lth.se>
Web page: http://www.eit.lth.se/index.php?gpuid=234&L=0