High Speed Devices
Höghastighetselektronik

EITP01F, 7.5 credits

Valid from: Spring 2018
Decided by: Professor Thomas Johansson
Date of establishment: 2018-12-07

General Information

Division: Electrical and Information Technology
Course type: Course given jointly for second and third cycle
The course is also given at second-cycle level with course code: EITP01
Teaching language: English

Aim

This course aims at providing fundamental knowledge of the physics which enables the very high frequency operation of modern transistors. Basic amplifier design for microwave frequencies is introduced. The course gives a modern description of transistors relevant for quantum well and FinFET devices, mainly based on ballistic transport.

Goals

Knowledge and Understanding

For a passing grade the doctoral student must

• describe the physics behind the operation of ballistic field effect transistors
• explain the origin of the hybrid-pi model and transcapacitances.
• describe the fundamental high frequency parameters for basic amplifiers
• understand the Smith chart representation of transmission lines
• relate the high frequency performance of a device from the device geometry and materials properties

Competences and Skills

For a passing grade the doctoral student must

• be able to perform relevant RF and DC calculations on transistors
• apply two-port description for transistor modeling
• calculate the maximum frequency performance of a transistor
• perform simple parameter extractions
• perform basic design of a microwave amplifier

Judgement and Approach

For a passing grade the doctoral student must

• realize the need for device scaling for high performance transistors
• Understand the origins of the maximum frequency performance limits for transistors

Course Contents

Basic semiconductor physics: density of states, band structure and Fermi-Dirac statistics for two-dimensional quantum structures. Ballistic and diffusive transport in semiconductors. Small signal modeling and the two-port description. Current and power gains. Stability. (Heterostructure) FET: Geometric layout. Diffusive and ballistic DC and AC models with transcapacitances. Parasitic resistances and capacitances. Noise properties Transmission lines and Smith charts. Basic design of low noise amplifiers.

Course Literature

• Liu, W.: Fundamentals of III-V Devices: HBTs, MESFETs and HFETs/HEMTs.. Wiley Interscience, 1999. ISBN 9780471297000.
• Lundstrom, M. & Guo, J.: Nanoscale Transistors, Device Physics, Modeling and Simulation.. Springer, 2006. ISBN 9781441939159.
• Föreläsningsanteckningar och utskrifter.

Instruction Details

Types of instruction: Lectures, seminars, laboratory exercises, exercises

Examination Details

Examination formats: Written exam, written assignments, seminars given by participants
Grading scale: Failed, pass
Examiner:

Admission Details

Admission requirements: None
Assumed prior knowledge: Knowhow corresponding to ESS030/ESSF20 or FFF021/FFN30 or ETIN70

Further Information

Course Coordinator: Mattias Borg, mattias.borg@eit.lth.se

Course Occasion Information

Contact and Other Information

Course coordinators:
Web page: https://www.eit.lth.se/course/eitp01