English

If sufficient demand

The course aims at giving a modern description of the physics of nanoscale field effect transistors. At these length scales, the electron transport is quasi-ballistic, and the transistor modeling is different as compared with the traditional diffusive models. After the course, the student should be able to read scientific articles from relevant journals.

Basic Transport Physics
1D and 2D MOS electrostatics
Fundamental limits for CMOS switches
Ballistic 2D FETs
Diffusive MOSFETs
Basics of scattering theory
Ballistic 1D FETs & CNT FETs
Molecular FETs and single electron transistors

be able to analyze the field effect transistors assuming ballistic transport
be able to describe the effect from scattering for quasi-ballistic 2D MOSFETs
be able to explain the effect due to 2D electrostatics for the FET performance and scaling
be able to explain how the band structure affectes the ballistic currents for 1D and 2D MOSFETs
be able to describe the function for a single electron transistor

Independently be able to perform calculations of ballistic currents for 1D and 2D transistors
be able to perform relevant approximations for strongly degenerated and non-degenerated biasings.
be able to relate low field mobility to mean free path

be able to understand the critical differences between the diffusive and ballistic transistor models
reflect over possibilities and fundamental limits for nanoscale MOSFETs

Lectures

Exercises

Written exam

Failed, pass

Basic knowledge of semiconductor physics and MOSFETs

Lundstrom, M. & Guo, J.: Nanoscale Transistors. Springer, 2005. ISBN 9780387280028.

Available as an e-book

Course Coordinator: Erik Lind, erik.lind@eit.lth.se

EIT115F

 -10-20

FN1/Anders Gustafsson